International Journal of Engineering Research and 4(08):27 Katageri AC, Sheeparamatti BG (2015) Carbon Nanotube based Piezoresistive Pressure Sensor for Wide Range Pressure Sensing Applications-A Review. Sensors 18(7):2023ĭevi R, Gill SS (2021) A squared bossed diaphragm piezoresistive pressure sensor based on CNTs for low pressure range with enhanced sensitivity. Tran AV, Zhang X, Zhu B (2018) Mechanical structural design of a piezoresistive pressure sensor for low-pressure measurement: a computational analysis by increases in the sensor sensitivity. J Nanoelectron Optoelectron 13(3):324–330īala S, Khosla M (2018) Design and analysis of electrostatic doped tunnel CNTFET for various process parameters variation. J Semicond 39(4):044001īala S, Khosla M (2018) Comparative study and analysis of cntfet and tunnel cntfet. IEEE/ASME Transactions on Mechatronics 24(2):832–840īala S, Khosla M (2018) Design and simulation of nanoscale double-gate TFET/tunnel CNTFET. Kayed MO, Balbola AA, Moussa WA (2019) A new temperature transducer for local temperature compensation for piezoresistive 3-D stress sensors. Li J, Zhang C, Zhang X, He H, Liu W, Chen C (2020) Temperature compensation of Piezo-resistive pressure sensor utilizing ensemble AMPSO-SVR based on improved Adaboost. AIP Adv 5(12):127216Īli A, Khan A, Ali A, Ahmad M (2017) Pressure-sensitive properties of carbon nanotubes/bismuth sulfide composite materials. Zhao X, Yu Y, Li D, Wen D (2015) Design, fabrication, and characterization of a high-sensitivity pressure sensor based on nano-polysilicon thin-film transistors. Li C, Cordovilla F, Jagdheesh R, Ocaña JL (2018) Design optimization and fabrication of a novel structural SOI piezoresistive pressure sensor with high accuracy. Mohamad M, Soin N, Ibrahim F (2018) Design optimisation of high sensitivity MEMS piezoresistive intracranial pressure sensor using Taguchi approach. Guan T, Yang F, Wang W, Huang X, Jiang B, Zhang D (2016) The design and analysis of piezoresistive shuriken-structured diaphragm micro-pressure sensors. Xu Y, Hu X, Kundu S, Nag A, Afsarimanesh N, Sapra S, Mukhopadhyay SC, Han T (2019) Silicon-based sensors for biomedical applications: a review. Biomedical Physics & Engineering Express 3(4):045003 Meena KV, Mathew R, Sankar AR (2017) Design and optimization of a three-terminal piezoresistive pressure sensor for catheter-based in vivo biomedical applications. Journal of Nanotechnology in Engineering and Medicine 2(3) Sathyanarayanan S, Vimala Juliet A (2011) Simulation of low-pressure MEMS sensor for biomedical application. Lou L, Zhang S, Park WT, Tsai JM, Kwong DL, Lee C (2012) Optimization of NEMS pressure sensors with a multilayered diaphragm using silicon nanowires as piezoresistive sensing elements. With the increasing temperature it is observed that silicon pressure output underestimated by 23%. Based on simulation results, silicon and CNT both pressure sensor also shows better results at near room temperature. Pressure sensors using CNT and silicon piezo resistive sensing materials were simulated on silicon (100) diaphragm by ANYSIS. In this paper, CNT piezoresistive material has been employed as sensing elements for pressure sensor and compared with silicon in terms of output voltage and sensor performance degradation at higher temperature. Though various techniques have been suggested and put into actuality with successful attainment, the techniques featuring easy implementation and perfect compatibility with existing schemes are still blooming demanded to design a piezoresistive pressure sensor with perfect comprehensive performance. The compensated pressure sensor is supremacy for pressure measurement with temperature variations. The attainment of the desired compensation techniques is highly compatible with the MEMS device fabrication. Resistive compensation employed extra piezoresistors with Negative Temperature Coefficient of Resistivity (TCR) for temperature compensation. Use of smart material Carbon nanotubes (CNT) and a few effective temperature compensation techniques are presented in this study to reduce the temperature effect on the accuracy of the sensor. Here, the temperature effects on the desired representation of the sensor are analysed. In silicon-based piezoresistive pressure sensor, the accuracy of the sensor is affected mainly by thermal drift and the sensitivity of the sensor varies with the rise in temperature.
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